j.e.iizu ^zmi-lonatictot. lrroaucti, una. \-s j 20 stern ave. springfield, new jersey 07081 u.s.a. telephone: (973) 376-2922 (212)227-6005 fax: (973) 376-8960 silicon npn power transistor bdw93/a/b/c description ? collector current -lc= 12a ? collector-emitter sustaining voltage- : vceo(sus) = 45v(min)- bdw93; 60v(min)- bdw93a 80v(min)- bdw93b;.100v(min)- BDW93C ? complement to type bdw94/a/b/c applications ? designed for hammer drivers, audio amplifier applications. absolute maximum ratings(ta=25'c) symbol vcbo vceo vebo ic icm ib pc tj tstg parameter collector-base voltage collector-emitter voltage bdw93 bdw93a bdw93b BDW93C bdw93 bdw93a bdw93b BDW93C emitter-base voltage collector current-continuous collector current-peak base current collector power dissipation @ tc=25c junction temperature storage temperature range value 45 60 80 100 45 60 80 100 5 12 15 0.2 80 150 -65-150 unit v v v a a a w 'c 'c thermal characteristics symbol rth j-c parameter thermal resistance, junction to case max 1.5 unit c/w ? i ' pin til 1 2 3 t2 ~~k j -i- -iw i? av> t ' r1 r! * 3 1.base 2. collector s.b^itter to-220c package l jyr a i * *?b- -h ,*?-v-?! xh ^ert e ? m.oov ' h '?' ill c i t~ h;-l i)09 , i qim a b c d f c h j k l q r s u v soi ? mm win 15.70 9.90 4.20 0.70 3.40 4.98 2.70 0.44 13.20 1.10 2.70 2.50 1.29 6.45 8.66 max 15.90 10.10 4.40 0.90 3.60 5.18 2.90 0.46 13.40 1.30 2.90 2.70 1.31 6.65 8.86 v ?poo- 's / ? *-j quality semi-conductors
silicon npn power transistor bdw93/a/b/c electrical characteristics tc=25'c unless otherwise specified symbol vceo(sus) vce(sat)-1 vce(sat)-2 vbe(sat)-1 vbe(sat)-1 icso iceo iebo hpe-1 hpe-2 hpe-3 vecf-i vecf-2 parameter collector-emitter sustaining voltage bdw93 bdw93a bdw93b BDW93C collector-emitter saturation voltage collector-emitter saturation voltage base-emitter saturation voltage base-emitter saturation voltage collector cutoff current collector cutoff current bdw93 bdw93a bdw93b BDW93C bdw93 bdw93a bdw93b BDW93C em itter cutoff current dc current gain dc current gain dc current gain c-e diode forward voltage c-e diode forward voltage conditions lc= 5a; ib= 20ma ic=10a;ib=0.1a lc= 5a; ib= 20ma lc= 10a;ib=0.1a vcb= 45v; ie= 0 vcb= 60v; ie= 0 vcb= 80v; ie= 0 vcb=100v;ie=0 vce= 45v; ib= 0 vce= 60v; ib= 0 vce= 80v; ib= 0 vce= 100v; ib=0 veb= 5v; lc= 0 lc= 3a; vce= 3v lc= 5a; vce= 3v lc=10a;vce=3v if=5a if= 10a min 45 60 80 100 1000 750 100 typ. max 2.0 3.0 2.5 4.0 0.1 1.0 2.0 20000 2.0 4.0 unit v v v v v ma ma ma v v
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